| PART |
Description |
Maker |
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| CCF-2 |
Industrial Power, Flameproof (High Temperature Coating Meets EIA RS-325-A Spec), Small Size, High Power Rating, Excellent High Frequency Characteristics, Low Noise, Low Voltage Coefficient, Tape and Reel Packaging
|
Vishay
|
| WSLT5931 WSLT59312L000FEA WSLT59312L000FEK WSLT593 |
Power Metal Strip? Resistors, High Temperature (275 °C) Low Value (down to 0.001 Ω), Surface Mount
Power Metal Strip庐 Resistors, High Temperature (275 掳C) Low Value (down to 0.001 惟), Surface Mount
Power Metal Strip㈢ Resistors, High Temperature (275 ∑C) Low Value (down to 0.001 ヘ), Surface Mount
|
Vishay Siliconix
|
| WSLT2512 WSLT25124L000DEA WSLT25124L000DEK WSLT251 |
Power Metal Strip垄莽 Resistors, High Temperature (275 隆?C) Low Value (down to 0.01 楼?), Surface Mount
Power Metal Strip? Resistors, High Temperature (275 °C) Low Value (down to 0.01 Ω), Surface Mount
|
Vishay Siliconix
|
| XAL1010-102ME XAL1010-103ME XAL1010-152ME XAL1010- |
High Temperature Shielded Power Inductors
|
Coilcraft lnc.
|
| EDI8F81025LP100B6C EDI8F81025LP100B6I EDI8F81025LP |
Dual Input, High Speed, Dual Channel Power MOSFET Driver; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R
Dual Input, High Speed, Dual Channel Power MOSFET Driver; Temperature Range: 0°C to 70°C; Package: 8-PDIP
Dual Input, High Speed, Dual Channel Power MOSFET Driver; Temperature Range: 0°C to 70°C; Package: 8-SOIC
Dual Channel, High Speed, High Current Line Driver with 3-State; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R
Dual Input, High Speed, Dual Channel Power MOSFET Driver; Temperature Range: -40°C to 85°C; Package: 8-PDIP
Dual Channel, High Speed, High Current Line Driver with 3-State; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R x8的SRAM模块
|
Electronic Theatre Controls, Inc.
|
| HF8-1AH12-DSEA HF8-1AH12-DSEF HF8-1CH12-DSEA HF8-1 |
SUBMINIATURE INTERMEDIATE HIGH TEMPERATURE POWER RELAY
|
Hongfa Technology
|
| AD8634HRZN |
High Temperature, Low Power Operational Amplifier
|
Analog Devices
|
| AD7507JN AD7507SE AD7507SD/883B AD7507SE/883B AD75 |
7ns, Low Power, Single Supply, Ground-Sensing Comparator; Package: MSOP; No of Pins: 8; Temperature Range: 0°C to 70°C
Dual 400MHz Current Feedback Amplifier; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C
Dual 400MHz Current Feedback Amplifier; Package: MSOP; No of Pins: 8; Temperature Range: 0°C to 70°C
8-Channel Analog Multiplexer
Nanopower Precision Shunt Voltage Reference; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C
Low Cost Dual and Triple 300MHz Current Feedback Amplifiers with Shutdown; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C
Low Power 5V RS232 Dual Driver/Receiver with 0.1?μF Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?°C to 85?°C
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
Single 400MHz Current Feedback Amplifier; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C
7ns, Low Power, Single Supply, Ground-Sensing Comparator; Package: MSOP; No of Pins: 8; Temperature Range: 0°C to 70°C 8通道模拟多路复用
|
Analog Devices, Inc.
|
| GB01SHT06-CAU-15 |
High Temperature Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
| AM27C040-120/BUA AM27C040-120/BXA AM27C040-120LIB |
Dual PowerPath Switch Driver; Package: SSOP; No of Pins: 16; Temperature Range: -40°C to 85°C
Single and Dual Protected High Side Switches; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C
Differential Bus Transceiver; Package: SO; No of Pins: 8; Temperature Range: -40°C to 85°C
Low Noise, Switched Capacitor-Regulated Voltage Inverters; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C
SIM Power Supplyand Level Translator; Package: SSOP; No of Pins: 16; Temperature Range: -40°C to 85°C
Single and Dual PCMCIA Protected 3.3V/5V VCC Switches; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C
1MHz/500kHz Continuous Time Low Noise, Lowpass Elliptic Filter; Package: SO; No of Pins: 8; Temperature Range: -40°C to 85°C
Low Power RS485 Transceiver with Receiver Fail-Safe; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
Very Low Noise, Low Distortion Active RC Quad Universal Filter; Package: SSOP; No of Pins: 20; Temperature Range: 0°C to 70°C
Low Power RS485 Transceiver with Receiver Fail-Safe; Package: SO; No of Pins: 8; Temperature Range: -40°C to 85°C x8存储
1MHz/500kHz Continuous Time Low Noise, Lowpass Elliptic Filter; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C x8存储
x8 EPROM x8存储
|
Samsung Semiconductor Co., Ltd.
Advanced Micro Devices, Inc.
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